Overview of aluminum nitride ceramics

Aluminum Nitride Ceramic is an advanced ceramic material with aluminum nitride as the main component. It has been widely used in electronics, optics, and mechanics due to its unique properties.

Features of aluminum nitride ceramics

High thermal conductivity: Aluminum nitride ceramics have relatively high thermal conductivity, usually between 170-260 W/m·K, which makes it an excellent heat dissipation material. It is especially suitable for electronic devices that require efficient heat dissipation, such as substrate materials for power semiconductor devices.

Good electrical insulation: Despite its high thermal conductivity, aluminum nitride ceramics are excellent insulators of electricity, which can effectively prevent current leakage and ensure the safe operation of electronic components.

Low dielectric constant and dielectric loss: These characteristics make aluminum nitride ceramics very suitable for use in high-frequency circuits because it can reduce energy loss during signal transmission.

High temperature resistance: Aluminum nitride ceramics can maintain structural stability and strength at extremely high temperatures. Its melting point is about 2800°C, so it is suitable for applications in high temperature environments.

Low thermal expansion coefficient: Compared with semiconductor materials such as silicon, aluminum nitride has a lower thermal expansion coefficient, which means it has better dimensional stability when the temperature changes, which helps improve packaging reliability.

Corrosion resistance: Aluminum nitride ceramics have good chemical stability to most molten metals and are not easily oxidized or corroded, allowing them to perform well in harsh environments.

High mechanical strength: Although not as hard as some other types of ceramic materials, aluminum nitride ceramics still provide enough mechanical strength to allow them to be used in many structural applications.

(High Temperature ALN Aluminum Nitride Ceramic Tray Heating Plate for Semiconductor Industry)

Specifications of High Temperature ALN Aluminum Nitride Ceramic Tray Heating Plate for Semiconductor Industry

The High Temperature ALN Light Weight Aluminum Nitride Ceramic Tray Heating Plate is developed for demanding semiconductor production processes. It uses aluminum nitride ceramic, a material understood for high thermal conductivity and excellent electric insulation. This combination makes certain efficient heat transfer while protecting against electrical leak, important for delicate semiconductor applications. The plate operates reliably at temperatures approximately 800 ° C, maintaining stability under prolonged high-heat problems.

The ceramic tray stands up to thermal shock and chemical corrosion, making it ideal for harsh atmospheres. Its low thermal growth coefficient lessens warping or fracturing throughout rapid temperature level modifications. The standard size is 200mm x 200mm x 10mm, with alternatives for custom measurements. Thickness arrays from 5mm to 15mm, stabilizing mechanical strength and heat circulation.

Embedded burner use molybdenum or tungsten, products selected for high melting points and low thermal growth. These elements make certain consistent warmth circulation throughout the plate surface, with temperature level uniformity within ± 2 ° C. The heating plate supports voltage inputs from 100V to 480V, suiting numerous industrial power systems. Maximum power output gets to 5kW, adjustable via integrated control interfaces.

Surface finish is brightened to a roughness below 0.2 µm Ra, reducing fragment contamination throughout wafer handling. Optional layers, such as gold or platinum, boost efficiency in certain procedures like chemical vapor deposition. The plate integrates with basic semiconductor tools, consisting of vacuum chucks and robotic handlers.

Safety functions include over-temperature protection and automatic shutdown devices. These prevent damage to both the plate and refined materials. The design adheres to sector standards for cleanroom use, minimizing outgassing and particulate generation.

Applications include wafer bonding, annealing, and lithography. The plate’s resilience reduces downtime for replacements, lowering lasting prices. Compatibility with inert gases like nitrogen or argon allows usage in oxidation-sensitive processes. Customized electric connections and installing options are offered to match existing arrangements.

Product pureness goes beyond 99.5%, making certain marginal pollutants impact semiconductor top quality. Checking consists of thermal biking and leak existing checks, with certifications for RoHS and REACH conformity. Lead times differ by modification, with typical units delivered within four weeks.

(High Temperature ALN Aluminum Nitride Ceramic Tray Heating Plate for Semiconductor Industry)

Applications of High Temperature ALN Aluminum Nitride Ceramic Tray Heating Plate for Semiconductor Industry

High-temperature ALN aluminum nitride ceramic tray heating plates play an essential function in the semiconductor industry. These plates manage severe warm efficiently. Their high thermal conductivity makes certain warmth spreads equally. This is important for specific semiconductor manufacturing.

Semiconductor wafer processing relies upon these heating plates. They give secure temperatures during lithography and doping. Consistent home heating prevents problems in silicon wafers. This boosts chip top quality and efficiency.

Thin-film deposition procedures make use of ALN ceramic trays. Home plates keep precise temperature levels for coating materials onto substrates. This makes sure layers bond properly. It enhances the longevity of digital parts.

Annealing and etching applications take advantage of ALN home heating plates. High warm therapy removes impurities from semiconductor products. The plates resist thermal shock. This prevents fractures under rapid temperature adjustments.

ALN ceramic trays function well in high-temperature environments. They stay secure at over 1000 ° C. Various other materials warp or degrade under such problems. ALN keeps its shape and feature. This prolongs devices life-span.

Chemical resistance is one more advantage. Rough gases and acids made use of in semiconductor laboratories do not harm ALN plates. This lowers upkeep demands. Assembly line run much longer without interruptions.

Power efficiency issues in manufacturing. ALN home heating plates transfer heat quicker than typical products. Much less power is lost. Operating expenses go down over time.

These plates support automation in semiconductor manufacture. Their reliability ensures consistent results in high-volume production. Producers achieve greater returns with fewer errors.

Lasting sturdiness makes ALN trays economical. They endure day-to-day industrial use without wear. Substitute regularity decreases. This conserves cash and downtime.

High-temperature ALN ceramic heating plates fulfill rigorous market standards. They resolve difficulties in semiconductor manufacturing. Their usage boosts procedure control and item high quality.

Company Introduction

Advanced Ceramics founded on October 17, 2014, is a high-tech enterprise committed to the research and development, production, processing, sales and technical services of ceramic relative materials and products.. Since its establishment in 2014, the company has been committed to providing customers with the best products and services, and has become a leader in the industry through continuous technological innovation and strict quality management.

Our products includes but not limited to Silicon carbide ceramic products, Boron Carbide Ceramic Products, Boron Nitride Ceramic Products, Silicon Carbide Ceramic Products, Silicon Nitride Ceramic Products, Zirconium Dioxide Ceramic Products, Quartz Products, etc. Please feel free to contact us.(nanotrun@yahoo.com)

Payment Methods

T/T, Western Union, Paypal, Credit Card etc.

Shipment Methods

By air, by sea, by express, as customers request.

5 FAQs of High Temperature ALN Aluminum Nitride Ceramic Tray Heating Plate for Semiconductor Industry

What is the maximum temperature the ALN ceramic heating plate can handle? The ALN ceramic heating plate operates stably at temperatures up to 1000°C. It resists thermal shock and maintains structural integrity under extreme heat. This makes it ideal for high-temperature semiconductor processes like annealing or diffusion.

Why is Aluminum Nitride used instead of other ceramics? Aluminum Nitride has higher thermal conductivity than alumina. It transfers heat faster and more evenly across the tray. It also has low thermal expansion, reducing warping risks. Its electrical insulation prevents current leakage, critical for sensitive semiconductor applications.

How do I clean and maintain the heating plate? Wipe the surface with a dry, non-abrasive cloth after cooling. Avoid harsh chemicals or water to prevent damage. Check for cracks or wear regularly. Store it in a dry environment. Follow the manufacturer’s guidelines for specific cleaning agents or methods.

Is the heating plate compatible with vacuum environments? Yes. The ALN ceramic material performs well in vacuum or controlled atmospheres. It resists outgassing and chemical reactions with process gases. This ensures consistent performance in semiconductor fabrication setups requiring vacuum chambers or inert gas conditions.

Does the heating plate ensure uniform temperature distribution? Yes. The ALN material’s high thermal conductivity minimizes hot or cold spots. Advanced manufacturing techniques optimize heating element placement. This achieves temperature uniformity within ±2°C across the tray surface, critical for precision semiconductor processes.

(High Temperature ALN Aluminum Nitride Ceramic Tray Heating Plate for Semiconductor Industry)