Overview of Semiconductor Grade Aluminum Nitride PVD Target

Aluminum Nitride Ceramic is an advanced ceramic material with aluminum nitride as the main component. It has been widely used in electronics, optics, and mechanics due to its unique properties.

Features of Semiconductor Grade Aluminum Nitride PVD Target

High thermal conductivity: Aluminum nitride ceramics have relatively high thermal conductivity, usually between 170-260 W/m·K, which makes it an excellent heat dissipation material. It is especially suitable for electronic devices that require efficient heat dissipation, such as substrate materials for power semiconductor devices.

Good electrical insulation: Despite its high thermal conductivity, aluminum nitride ceramics are excellent insulators of electricity, which can effectively prevent current leakage and ensure the safe operation of electronic components.

Low dielectric constant and dielectric loss: These characteristics make aluminum nitride ceramics very suitable for use in high-frequency circuits because it can reduce energy loss during signal transmission.

High temperature resistance: Aluminum nitride ceramics can maintain structural stability and strength at extremely high temperatures. Its melting point is about 2800°C, so it is suitable for applications in high temperature environments.

Low thermal expansion coefficient: Compared with semiconductor materials such as silicon, aluminum nitride has a lower thermal expansion coefficient, which means it has better dimensional stability when the temperature changes, which helps improve packaging reliability.

Corrosion resistance: Aluminum nitride ceramics have good chemical stability to most molten metals and are not easily oxidized or corroded, allowing them to perform well in harsh environments.

High mechanical strength: Although not as hard as some other types of ceramic materials, aluminum nitride ceramics still provide enough mechanical strength to allow them to be used in many structural applications.

(Semiconductor Grade Aluminum Nitride PVD Target)

Specifications of Semiconductor Grade Aluminum Nitride PVD Target

This Aluminum Nitride PVD target is for semiconductor production. It meets the strict demands of chip manufacturing. High purity is essential. Our targets offer 4N (99.99%) to 6N (99.9999%) purity. This minimizes contamination risks. Contaminants ruin sensitive electronic layers.

Density is critical. Our targets achieve over 99% of the theoretical density. This prevents cracking during sputtering. It also stops particles from flaking off. Flakes cause defects in thin films. High density ensures stable film deposition.

Grain size matters. We control the grains tightly. Typical grain size is under 10 micrometers. Small, uniform grains give a smooth target surface. This promotes even sputtering. It results in consistent film thickness across the wafer.

Surface finish is important. The target face is very flat. Surface roughness is kept low, typically Ra < 0.5 micrometers. A smooth surface minimizes arcing during the PVD process. Arcing damages the film. The target is bonded securely. It uses a reliable method to attach to a backing plate. This bond must handle high power and heat. It prevents the target from separating. Separation stops production. Packaging protects the target. We use cleanroom procedures. Targets are sealed in particle-free bags. This keeps them pristine until they reach your tool. Handling instructions are clear. Proper care maintains target quality. These specs ensure reliable performance. They deliver high-quality Aluminum Nitride films. These films are crucial for advanced semiconductors. They provide good insulation and heat spreading.

(Semiconductor Grade Aluminum Nitride PVD Target)

Applications of Semiconductor Grade Aluminum Nitride PVD Target

Semiconductor grade aluminum nitride PVD targets are essential for making advanced electronics. These targets are very pure and dense. They are used in physical vapor deposition machines. The machines vaporize the target material. The vapor forms a thin film on a silicon wafer. Aluminum nitride films are important for several chip applications.

One major use is gate insulation. Aluminum nitride films act as insulators in transistor gates. They are good for high-power devices. They handle high voltages well. They prevent electrical leakage effectively. This improves transistor performance significantly.

Another key application is heat spreading. Aluminum nitride moves heat away from sensitive chip areas. It prevents overheating. This is critical for high-power amplifiers and processors. Efficient heat management extends device life. It also prevents performance drops.

Aluminum nitride films also protect surfaces. They act as barrier layers during chip manufacturing. They shield underlying materials from harsh chemicals. This protection is vital during etching steps. It keeps the circuit structures intact and precise.

The material is also valuable for surface acoustic wave devices. These devices are filters in smartphones and radios. Aluminum nitride films create the necessary piezoelectric effect. They generate and sense acoustic waves efficiently. This ensures clear signal filtering.

Finally, aluminum nitride serves as a passivation layer. It coats the finished chip surface. This layer protects the circuitry from moisture and contaminants. It prevents corrosion and electrical shorts. It makes the final device more reliable and durable.

Company Introduction

Advanced Ceramics founded on October 17, 2014, is a high-tech enterprise committed to the research and development, production, processing, sales and technical services of ceramic relative materials and products.. Since its establishment in 2014, the company has been committed to providing customers with the best products and services, and has become a leader in the industry through continuous technological innovation and strict quality management.

Our products includes but not limited to Silicon carbide ceramic products, Boron Carbide Ceramic Products, Boron Nitride Ceramic Products, Silicon Carbide Ceramic Products, Silicon Nitride Ceramic Products, Zirconium Dioxide Ceramic Products, Quartz Products, etc. Please feel free to contact us.

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Shipment Methods

By air, by sea, by express, as customers request.

5 FAQs of Semiconductor Grade Aluminum Nitride PVD Target

What exactly is a semiconductor grade aluminum nitride PVD target?
It’s a solid disc or plate. Factories use it in machines for physical vapor deposition. This process puts very thin layers of material onto silicon wafers. The target itself is made from aluminum nitride. This material is chosen because it works well for making chips.

Why is purity so important for these targets?
Impurities ruin the thin film. Even tiny amounts of unwanted elements cause problems. They make the film layer weak or unstable. This directly hurts how well the final electronic chip works. So, the target material must be super clean. We need extremely high purity levels.

Where do factories mainly use these aluminum nitride targets?
They are key for making parts inside chips. Think of thin layers that insulate electricity or protect surfaces. You find them in advanced memory chips and processors. They are also used in making LEDs and some power electronics. The target helps create essential insulating layers in these devices.

How should these targets be handled and stored?
They need careful treatment. Moisture is bad. Air can slowly damage them too. So, keep them in sealed containers. Use dry gas like nitrogen inside the package. Always handle them with clean gloves. Avoid touching the surface directly. Follow strict industry standards for storage.

How is this different from regular aluminum nitride?
Regular aluminum nitride might be okay for less critical jobs. Semiconductor grade is much better. It is far purer. Its structure is more controlled and consistent. The density is higher. This ensures the vaporized film is perfect every time. Chip factories need this level of reliability.

(Semiconductor Grade Aluminum Nitride PVD Target)