Баррасии сафолҳои нитриди алюминий

Керамики нитриди алюминий як маводи пешрафтаи сафолӣ бо нитриди алюминий ҳамчун ҷузъи асосӣ мебошад. Аз сабаби хосиятҳои беназираш он дар электроника, оптика ва механика васеъ истифода шудааст.

Хусусиятҳои сафолҳои нитриди алюминий

Қобилияти гармидиҳии баланд: сафолҳои нитриди алюминий дорои қобилияти гармидиҳии нисбатан баланд, одатан дар байни 170-260 Вт / м · К, ки онро як маводи аълои паҳнкунандаи гармӣ месозад. Он махсусан барои дастгоҳҳои электронӣ мувофиқ аст, ки паҳншавии гармии гармро талаб мекунанд, ба монанди маводи зерсохтор барои дастгоҳҳои нимноқили барқ.

Изолятсияи хуби электрикӣ: Сарфи назар аз гузариши гармии баланди худ, сафолҳои нитриди алюминий изолятори аълои нерӯи барқ ​​​​мебошанд, ки метавонанд аз ихроҷи ҷараён самаранок пешгирӣ кунанд ва кори бехатари ҷузъҳои электрониро таъмин кунанд.

Муқовимати пасти диэлектрикӣ ва талафоти диэлектрикӣ: Ин хусусиятҳо сафолҳои нитриди алюминийро барои истифода дар схемаҳои басомадҳои баланд хеле мувофиқ мекунанд, зеро он метавонад талафоти энергияро ҳангоми интиқоли сигнал коҳиш диҳад.

Муқовимат ба ҳарорати баланд: сафолҳои нитриди алюминий метавонад устувории сохторӣ ва қувватро дар ҳарорати хеле баланд нигоҳ дорад. Нуқтаи обшавии он тақрибан 2800 ° C аст, бинобар ин он барои барномаҳо дар муҳити ҳарорати баланд мувофиқ аст.

Коэффисиенти тавсеаи гармии паст: Дар муқоиса бо маводи нимноқилӣ ба монанди кремний, нитриди алюминий коэффисиенти васеъшавии гармии камтар дорад, ки маънои онро дорад, ки ҳангоми тағирёбии ҳарорат устувории андозагирии беҳтар дорад, ки ба беҳтар шудани эътимоднокии бастабандӣ мусоидат мекунад.

Муқовимат ба зангзанӣ: сафолҳои нитриди алюминий ба аксари металлҳои гудохта устувории хуби химиявӣ доранд ва ба осонӣ оксид намешаванд ё занг зада намешаванд, ки ба онҳо имкон медиҳад, ки дар муҳити сахт хуб кор кунанд.

Қувваи баланди механикӣ: Гарчанде ки мисли баъзе намудҳои дигари маводи сафолӣ сахт набошад ҳам, сафолҳои нитриди алюминий то ҳол қувваи кофӣ механикиро таъмин мекунанд, то онҳо дар бисёр барномаҳои сохторӣ истифода шаванд.

(High Temperature ALN Aluminum Nitride Ceramic Tray Heating Plate for Semiconductor Industry)

Specifications of High Temperature ALN Aluminum Nitride Ceramic Tray Heating Plate for Semiconductor Industry

The High Temperature ALN Light Weight Aluminum Nitride Ceramic Tray Heating Plate is developed for demanding semiconductor production processes. It uses aluminum nitride ceramic, a material understood for high thermal conductivity and excellent electric insulation. This combination makes certain efficient heat transfer while protecting against electrical leak, important for delicate semiconductor applications. The plate operates reliably at temperatures approximately 800 ° C, maintaining stability under prolonged high-heat problems.

The ceramic tray stands up to thermal shock and chemical corrosion, making it ideal for harsh atmospheres. Its low thermal growth coefficient lessens warping or fracturing throughout rapid temperature level modifications. The standard size is 200mm x 200mm x 10mm, with alternatives for custom measurements. Thickness arrays from 5mm to 15mm, stabilizing mechanical strength and heat circulation.

Embedded burner use molybdenum or tungsten, products selected for high melting points and low thermal growth. These elements make certain consistent warmth circulation throughout the plate surface, with temperature level uniformity within ± 2 ° C. The heating plate supports voltage inputs from 100V to 480V, suiting numerous industrial power systems. Maximum power output gets to 5kW, adjustable via integrated control interfaces.

Surface finish is brightened to a roughness below 0.2 µm Ra, reducing fragment contamination throughout wafer handling. Optional layers, such as gold or platinum, boost efficiency in certain procedures like chemical vapor deposition. The plate integrates with basic semiconductor tools, consisting of vacuum chucks and robotic handlers.

Safety functions include over-temperature protection and automatic shutdown devices. These prevent damage to both the plate and refined materials. The design adheres to sector standards for cleanroom use, minimizing outgassing and particulate generation.

Applications include wafer bonding, annealing, and lithography. The plate’s resilience reduces downtime for replacements, lowering lasting prices. Compatibility with inert gases like nitrogen or argon allows usage in oxidation-sensitive processes. Customized electric connections and installing options are offered to match existing arrangements.

Product pureness goes beyond 99.5%, making certain marginal pollutants impact semiconductor top quality. Checking consists of thermal biking and leak existing checks, with certifications for RoHS and REACH conformity. Lead times differ by modification, with typical units delivered within four weeks.

(High Temperature ALN Aluminum Nitride Ceramic Tray Heating Plate for Semiconductor Industry)

Applications of High Temperature ALN Aluminum Nitride Ceramic Tray Heating Plate for Semiconductor Industry

High-temperature ALN aluminum nitride ceramic tray heating plates play an essential function in the semiconductor industry. These plates manage severe warm efficiently. Their high thermal conductivity makes certain warmth spreads equally. This is important for specific semiconductor manufacturing.

Semiconductor wafer processing relies upon these heating plates. They give secure temperatures during lithography and doping. Consistent home heating prevents problems in silicon wafers. This boosts chip top quality and efficiency.

Thin-film deposition procedures make use of ALN ceramic trays. Home plates keep precise temperature levels for coating materials onto substrates. This makes sure layers bond properly. It enhances the longevity of digital parts.

Annealing and etching applications take advantage of ALN home heating plates. High warm therapy removes impurities from semiconductor products. The plates resist thermal shock. This prevents fractures under rapid temperature adjustments.

ALN ceramic trays function well in high-temperature environments. They stay secure at over 1000 ° C. Various other materials warp or degrade under such problems. ALN keeps its shape and feature. This prolongs devices life-span.

Chemical resistance is one more advantage. Rough gases and acids made use of in semiconductor laboratories do not harm ALN plates. This lowers upkeep demands. Assembly line run much longer without interruptions.

Power efficiency issues in manufacturing. ALN home heating plates transfer heat quicker than typical products. Much less power is lost. Operating expenses go down over time.

These plates support automation in semiconductor manufacture. Their reliability ensures consistent results in high-volume production. Producers achieve greater returns with fewer errors.

Lasting sturdiness makes ALN trays economical. They endure day-to-day industrial use without wear. Substitute regularity decreases. This conserves cash and downtime.

High-temperature ALN ceramic heating plates fulfill rigorous market standards. They resolve difficulties in semiconductor manufacturing. Their usage boosts procedure control and item high quality.

Ширкат Муқаддима

Advanced Ceramics, ки 17 октябри соли 2014 таъсис ёфтааст, як корхонаи баландтехнологӣ мебошад, ки ба пажӯҳиш ва таҳия, истеҳсол, коркард, фурӯш ва хидматрасонии техникии маводҳо ва маҳсулоти нисбии сафолӣ машғул аст.. Аз замони таъсисаш дар соли 2014, ширкат ӯҳдадор шудааст, ки ба мизоҷон беҳтарин маҳсулот ва хидматҳоро пешниҳод кунад ва тавассути идоракунии пайвастаи сифат ва технологияи нав ба пешсафи саноат табдил ёфт.

Маҳсулоти мо маҳсулоти сафолини кремний карбиди, Маҳсулоти сафолии бор нитриди бор, Маҳсулоти керамикии кремний, нитриди кремний, маҳсулоти сафолини цирконий диоксиди, маҳсулоти кварц ва ғайраҳоро дар бар мегирад. Лутфан, бо мо тамос гиред.(nanotrun@ya)

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5 FAQs of High Temperature ALN Aluminum Nitride Ceramic Tray Heating Plate for Semiconductor Industry

What is the maximum temperature the ALN ceramic heating plate can handle? The ALN ceramic heating plate operates stably at temperatures up to 1000°C. It resists thermal shock and maintains structural integrity under extreme heat. This makes it ideal for high-temperature semiconductor processes like annealing or diffusion.

Why is Aluminum Nitride used instead of other ceramics? Aluminum Nitride has higher thermal conductivity than alumina. It transfers heat faster and more evenly across the tray. It also has low thermal expansion, reducing warping risks. Its electrical insulation prevents current leakage, critical for sensitive semiconductor applications.

How do I clean and maintain the heating plate? Wipe the surface with a dry, non-abrasive cloth after cooling. Avoid harsh chemicals or water to prevent damage. Check for cracks or wear regularly. Store it in a dry environment. Follow the manufacturer’s guidelines for specific cleaning agents or methods.

Is the heating plate compatible with vacuum environments? Yes. The ALN ceramic material performs well in vacuum or controlled atmospheres. It resists outgassing and chemical reactions with process gases. This ensures consistent performance in semiconductor fabrication setups requiring vacuum chambers or inert gas conditions.

Does the heating plate ensure uniform temperature distribution? Yes. The ALN material’s high thermal conductivity minimizes hot or cold spots. Advanced manufacturing techniques optimize heating element placement. This achieves temperature uniformity within ±2°C across the tray surface, critical for precision semiconductor processes.

(High Temperature ALN Aluminum Nitride Ceramic Tray Heating Plate for Semiconductor Industry)